Author:
Sofield C.J.,Harper R.E.,Rosser P.J.
Abstract
AbstractWe have used the heavy ion elastic recoil technique to study B distribution
changes during Co and Ti di silicide formation on B implanted single crystal
Si wafers. B diffuses to the interface of TiSi2 and Si and to the
surface of CoSi2.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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