Author:
Kamins T. I.,Chiang S. Y.
Abstract
ABSTRACTTo investigate gettering of heavy metal impurities to the damaged regions surrounding an implanted buried oxide, the behavior of chrominum and copper on annealing has been investigated. Cr tends to segregate to the surface Si-SiO2 interface, although a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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