Performance of a-Si-H Solar Cells at Higher Growth Rates

Abstract

AbstractWe have studied the effects of external growth parameters during the deposition of the i-layers of a-Si p-i-n solar cells using dc plasma decomposition of silane-hydrogen mixtures at growth rates of up to 3A/s. The loss of initial performance with increasing growth rate is mainly due to a loss of short-circuit current. The relative degradation of efficiency upon extended light soaking also increases with growth rate, and is mainly due to a decrease in the fill factor. Systematic comparisons of the performance and its degradation with changes in growth conditions reveal that these two components of the total degradation have distinct origins.