A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon-Reference-Cited by-同舟云学术

A Numerical Model for Hot-Wire Chemical Vapor Deposition of Amorphous Silicon

Published:1999 Issue: Volume:557 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Goodwin D. G.

Abstract

AbstractA Direct Simulation Monte Carlo numerical model for hot-wire CVD is described that includes detailed gas-phase chemistry and accurately models gas-phase transport, from the low-pressure ballistic regime to the high-pressure diffusive regime. Model predictions for an idealized reactor geometry are shown to agree qualitatively with experimental trends.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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5. Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous silicon

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