Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties-Reference-Cited by-同舟云学术

Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties

Published:1999 Issue: Volume:557 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kessels W.M.M.,Smets A.H.M.,Korevaar B.A.,Adriaenssens G.J.,Sanden M.C.M. Van de,Schram D.C.

Abstract

AbstractA remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Deposition of device quality, lowHcontent amorphous silicon

2. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology

3. [7] Song H.-Z. , Adriaenssens G.J. , Smets A.H.M. , Korevaar B.A. , Kessels W.M.M. , Sanden M.C.M. van de , and Schram D.C. (to be published).

4. Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of a fastin situinfrared diagnostic tool;Review of Scientific Instruments;2003-05

2. Properties of a-Si:H films grown using hot wire-ECR plasma techniques;Thin Solid Films;2003-04

3. Growth chemistry of amorphous silicon and amorphous silicon–germanium alloys;Current Opinion in Solid State and Materials Science;2002-10

4. Methods of Deposition of Hydrogenated Amorphous Silicon for Device Applications;Thin Films and Nanostructures;2002

5. Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells;MRS Proceedings;2002