Author:
Noguchi T.,Usui S.,Gosain D. P.,Ikeda Y.
Abstract
AbstractThe existence of a novel tetrahedral semiconductor Quasi-Single-Crystalline (QSC) phase is posited. In the QSC semiconductor phase, the films consist of grains with a diamond structure of tetrahedral elements, such as Si, Ge and C, and the grains have a preferred orientation, such as <111> or <100> normal to the film. The lattices perpendicular to the grain boundaries are quasi-matched with neighboring grains. The grains in the films form a regular array, and are distributed more uniformly than in conventional poly-crystalline semiconductor films. Because of the small-angle grain boundaries, a tetrahedral QSC semiconductor such as QSC Si films are expected to have extremely low energy barriers at the grain boundaries.
Publisher
Springer Science and Business Media LLC
Reference18 articles.
1. [17] Geis M. W. , Smith H. I. , Tsauer B-Y. , Fan J. C. C. , Silversmith D. J. and Mountain R. W. , J. Electrochem. Soc., 2812(1982).
2. [9] Kumomi H. and Yonehara T. , Extended abstracts of IC SSDM 26(1993).
3. Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method
4. [2] Morozumi S. , Oguchi K. , Yazawa S. , Kodaira T. , Ohshima H. and Manao T. , SID 83 Digest 156(1983).
5. Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification
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