High Resolution Etching of Gaas and Cds Crystals-Reference-Cited by-同舟云学术

High Resolution Etching of Gaas and Cds Crystals

Published:1982 Issue: Volume:17 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Podlesnik D. V.,Gilgen H.H.,Osgood R.M.,Sanchez A.,Daneu V.

Abstract

ABSTRACTSubmicrometer gratings have been etched in GaAs and CdS crystals which have been immersed in an oxidizing etch and illuminated with interferring laser beams. A resolution of 170 nm was obtained. At high laser intensity and with prolonged etching time the surface properties of the material are degraded. The use of in-situ optical measurements of grating parameters allows ready optimization of the grating fabrication process.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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