Crystallisation and Diffusion in <001> Oriented Sapphire Amorphised by Zinc Ion Implantation

Abstract

AbstractHigh dose zinc implantation (1×1016 to 6×1016 ions/cm2) into c-axis sapphire at 770K produces amorphous surface layers. Post-implantation annealing at temperatures at and above 800°C show that the modes of recrystallisation are strongly dependant on ion dose. At low doses formation of crystallites of α and γ phase Al2O3 is seen, with no evidence of any planar epitaxial growth at the original crystalline-amorphous interface. The zinc is seen to diffuse isotropically within the crystallised layer and becomes partially substitutional within the crystallites. At high doses, however, the formation of crystallites is inhibited, with the layer remaining amorphous. A more rapid diffusion of zinc is seen in the amorphous Al2O3, with some of the zinc being lost at the surface.