Formation of ZnAl2O4 and MgAl2O4 Spinel in Al2O3 by Ion Implantation

Abstract

AbstractZnAl2O4 spinel has been formed in Al2O3 by ion implantation. Sequential implantation of Zn and 0 in overlapping profiles followed by annealing in Ar + H2 gives rise to a nearly continuous epitaxial layer of ZnAl2O4 oriented with (111) planes parallel to (0001) planes of Al2O3. If only Zn is implanted, then discrete bands of ZnAl2O4 oriented with (422) planes parallel to (0001) planes of Al2O3 are produced. By similar methods, oriented MgAl2O4 spinel also has been produced in Al2O3 by sequential Mg + O implantation.