X-Ray Double Crystal Topography of Processed Silicon Wafers

Abstract

ABSTRACTDouble crystal topographs of a processed silicon device wafer, taken in highly asymmetric reflection conditions using synchrotron radiation are presented. By using a variety of wavelengths and reflections the depth and distribution of defects generated by the fabrication process are explored. Examples of several reflections are given, with a spatial resolution of better than 5 microns and extremely high device and defect visibility. Results suggest that a high mismatch of lattice parameter at device edges leads to the formation of dislocation loops penetrating junctions.