Luminescence of Mbe SimGen Strained Monolayer Superlattices-Reference-Cited by-同舟云学术

Luminescence of Mbe SimGen Strained Monolayer Superlattices

Published:1990 Issue: Volume:198 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kallel M. A.,Arbet-Engels V.,Karunasiri R. P. G.,Wang K. L.

Abstract

ABSTRACTSimGen strained monolayer superlattices (SMS) have been fabricated by molecular beam epitaxy (MBE) and characterized using photoluminescence (PL). Symmetrically strained structures with different periodicities have been grown on top of a Si1−xGex alloy buffer layer. Luminescence features below (above) the Si (Ge) energy bandgap have been observed and attributed to either dislocations in the buffer layer or to energy band transitions in the SMS.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference22 articles.

1. Dislocation-related photoluminescence in silicon

2. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium

3. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

4. Observation of Direct Band Gap Properties in GenSimStrained-Layer Superlattices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of compositionally graded Si1−xGexalloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging;Journal of Applied Physics;1993-02-15

2. New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures;Applied Physics Letters;1991-11-11