Brittle to Ductile Transition Dependence upon the Transition Pressure Value of Semiconductors in Micromachining

Author:

Jasinevicius Renato G.,Pizani Paulo S.,Duduch Jaime G.

Abstract

Single-point diamond turning tests were carried out in two different [001]-oriented semiconductors, InSb and Si single crystals. The analysis of the conditions in which the machining is in ductile or brittle mode indicates that the plasticity presented by semiconductor crystals during micromachining can be correlated to the value of the transition pressure. It is shown that the ductility presented by different semiconductor single crystals is inversely related to the transition pressure value of the material.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mapping ductile-to-fragile transition and the effect of tool nose radius in diamond turning of single-crystal silicon;The International Journal of Advanced Manufacturing Technology;2022-02-07

2. Ultra-precision diamond turning of optical silicon—a review;The International Journal of Advanced Manufacturing Technology;2018-01-20

3. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal;The International Journal of Advanced Manufacturing Technology;2014-11-06

4. Diamond turning of small Fresnel lens array in single crystal InSb;Journal of Micromechanics and Microengineering;2013-04-18

5. Microstructure of nanoscratched semiconductors;Journal of Physics: Conference Series;2011-11-09

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