Growth and Characterization of Znsete Epilayers and Superlattices

Abstract

ABSTRACTLittle has been published about Te-rich ZnSexTel−x grown at low temperatures, in spite of some successes in the fabrication of wide band gap light emitting devices from ZnSeTe alloys grown at higher temperatures. We present x-ray diffraction and photoluminescence (PL) spectra for ZnSeTe epilayers and ZnSeTe/ZnTe superlattices grown by molecular beam epitaxy (MBE). These we compare with measurements on ZnTe, ZnSe and CdZnTe epilayers and on CdZnTe/ZnTe superlattices grown under similar conditions and also with data published for ZnSeTe alloys grown at high temperatures. Equilibrium phase diagrams for the ZnSeTe alloy system suggest a large miscibility gap at MBE growth temperatures; this may account for some unusual features in the (PL) spectra and for large line widths in the x-ray data. In spite of these possible miscibility problems, we find that ZnSeTe alloys luminesce brightly.