Molecular beam epitaxial growth and segregation of Hg1−Zn Se alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Improved ohmic contacts forp‐type ZnSe and relatedp‐on‐ndiode structures
2. The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe
3. 1993 Electronic Materials Conference (H2+);Yang,1993
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1. Studies on electrosynthesized zinc mercury selenide alloys;Journal of Materials Science: Materials in Electronics;2007-02-28
2. Microstructural development of directionally solidified Hg1−xZnxSe alloys;Journal of Electronic Materials;1999-06
3. Correlation between crystal defects and the band gap of epitaxially grown Hg1 − Zn Se on GaAs(001);Journal of Crystal Growth;1996-02
4. Optical properties of wide bandgap ZnHgSSe layers grown by molecular beam epitaxy;Journal of Crystal Growth;1996-02
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