From the Buffer Layer to Graphene on Silicon Carbide: Exploring Morphologies by Computer Modeling-Reference-Cited by-同舟云学术

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From the Buffer Layer to Graphene on Silicon Carbide: Exploring Morphologies by Computer Modeling

Published:2019-08-16 Issue: Volume:6 Page:
ISSN:2296-8016
Container-title:Frontiers in Materials
language:
Short-container-title:Front. Mater.

Author:

Bellucci Luca,Cavallucci Tommaso,Tozzini Valentina

Funder

Horizon 2020 Framework Programme

H2020 Marie Skłodowska-Curie Actions

Partnership for Advanced Computing in Europe AISBL

Publisher

Frontiers Media SA

Subject

Materials Science (miscellaneous)

Reference37 articles.

1. Practical guide to surface kinetic Monte Carlo simulations;Andersen;Front. Chem.,2019

2. Metadynamics;Barducci;Interdiscip. Rev. Comput. Mol. Sci,2011

3. Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC;Bouhafs;Carbon,2017

4. Unraveling localized states in quasi free standing monolayer graphene by means of density functional theory;Cavallucci;Carbon,2018

5. Multistable rippling of graphene on SiC: a density functional theory study;Cavallucci;J. Phys. Chem. C,2016

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation;Applied Surface Science;2024-06

2. The growth of epitaxial graphene on SiC and its metal intercalation: a review;Journal of Physics: Condensed Matter;2024-02-01

3. Crater-Free Monolayer Graphene Above the 2d Si Film on Sic(0001) Formed Via Sisn Cointercalation and Sn Deintercalation;2024

4. In silico design of advanced graphene-based nanodevices^*;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

5. Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC;physica status solidi (RRL) – Rapid Research Letters;2022-10-28

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