Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2-Reference-Cited by-同舟云学术

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Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2

Published:2019-03-29 Issue: Volume:7 Page:
ISSN:2296-424X
Container-title:Frontiers in Physics
language:
Short-container-title:Front. Phys.

Author:

Gao David Z.,Strand Jack,Munde Manveer S.,Shluger Alexander L.

Publisher

Frontiers Media SA

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics,Materials Science (miscellaneous),Biophysics

Reference53 articles.

1. Synaptic electronics: materials, devices and applications;Kuzum;Nanotechnology,2013

2. Silicon oxide (SiOx): a promising material for resistance switching?;Mehonic;Adv Mater,2018

3. Time dependent dielectric breakdown physics-Models revisited;McPherson;Microelectron Reliab,2012

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