Optical Properties of AlInN/AlN HEMTs in Detail-Reference-Cited by-同舟云学术

Optical Properties of AlInN/AlN HEMTs in Detail

Published:2022-12-15 Issue:2 Volume:12 Page:521-529
ISSN:1309-4726
Container-title:Karadeniz Fen Bilimleri Dergisi
language:tr
Short-container-title:KFBD

Author:

AKPINAR Ömer¹^ORCID,BİLGİLİ Ahmet²,ÖZTÜRK Mustafa²,ÖZÇELİK Süleyman²

Affiliation:

1. GAZI UNIVERSITY

2. GAZİ ÜNİVERSİTESİ

Abstract

In this study, the optical properties of AlInN/AlN high electron mobility transistor (HEMT) structure, grown on c-oriented sapphire with Metal-Organic Chemical Vapor Deposition (MOCVD) technique, being investigated. Optical characterization is made Kubelka- Munk method. Transmittance, absorbance, and reflectance are investigated in detail. Also, the Kubelka-Munk theory is employed to determine the forbidden energy band gap of InN by using special functions. The energy band gap obtained by this method was compared.

Publisher

Karadeniz Fen Bilimleri Dergisi

Subject

Community and Home Care

Reference11 articles.

1. Vurgaftman, I., and Meyer, J. R. (2003). Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics, 94(6), 3675-3696.

2. Aleksan, R., Bolognese, T., Equer, B., Karar, A., and, Reymond, J. M. (1990). Observation of Single Minimum Ionizing Particles with Amorphous-Silicon Diodes. Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 305(3), 512-516.

3. Li, Y., Qian, F., Gredecak, S., Wu, Y., Yan, H., Blom, D. A., and, Lieber, C. M. (2006). Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Letters, 6(7), 1468-1473.

4. Nakamura, S. (1991). Gan Growth Using Gan Buffer Layer. Japanese Journal of Applied Physics Part 2-Letters, 30(10a), 1705-1707.

5. Xing, H., Keller, S., Wu, Y. F., Mccarty, L., Smorchkova, I. P., Buttari, D., Coffie, R., Green, D. S., Parish, G., Heikman, S., Shen, L., Zhang, N., Xu, J. J., Denbaars, S. P., and, Mishra, U. K. (2001). Gallium nitride-based transistors. Journal of Physics-Condensed Matter, 13(32), 7139-7157.