A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors
Author:
Funder
National Natural Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/11/3/416/pdf
Reference23 articles.
1. Thin film transistor technology—Past, present, and future;Yue;Electrochem. Soc. Interface,2013
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
4. High-mobility thin film transistors with neodymium-substituted indium oxide active layer
5. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition
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