Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/11/3/430/pdf
Reference32 articles.
1. Nanomaterials in transistors: From high-performance to thin-film applications
2. 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
3. Benchmarking of MoS2FETs With Multigate Si-FET Options for 5 nm and Beyond
4. Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full-Band Quantum Transport Study
5. Integrated nanoelectronics for the future
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