Affiliation:
1. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
Funder
National Natural Science Foundation of China
Science and Technology Commission of Shanghai Municipality
China Postdoctoral Science Foundation
State Key Laboratory of Infrared Physics
Subject
General Materials Science,General Chemical Engineering
Reference128 articles.
1. History of infrared detectors;Rogalski;Opto-Electron. Rev.,2012
2. Ponomarenko, V.P., and Filachev, A.M. (2007). Infrared Techniques and Electro-Optics in Russia: A History 1946–2006, SPIE Press.
3. Rogalski, A., Adamiec, K., and Rutkowski, J. (2000). Narrow-Gap Semiconductor Photodiodes, SPIE Press.
4. Progress and challenges in blocked impurity band infrared detectors for space-based astronomy;Xiao;Sci. China Phys. Mech. Astron.,2022
5. Recent advances in the functional 2D photonic and optoelectronic devices;Wang;Adv. Opt. Mater.,2019
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献