Abstract
In this work, first-principles calculations have been utilized to predict the existence of a new Cu2TeO6 monolayer. It is shown that the predicted material is dynamically and thermally stable. The Cu2TeO6 monolayer is also found to be a narrow band gap semiconductor with a band gap size of 0.20 eV. Considering the obtained properties of the Cu2TeO6 monolayer, it is proposed for applications in various nanodevices in electronics and straintronics.
Funder
Ministry of Science and Higher Education of the Russian Federation
President of the Russian Federation
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
1 articles.
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