Parameter Optimization of RB-SiC Polishing by Femtosecond Laser

Abstract

Reaction-boned silicon carbide (RB-SiC) is considered a new material for large lightweight ground-based space telescopes due to its high specific stiffness, low thermal deformation, and excellent optical quality. The excellent mechanical properties of RB-SiC result in the low efficiency of traditional polishing and mechanical polishing. In this paper, a polishing method for RB-SiC based on a femtosecond laser is proposed to improve surface quality. A theoretical heat conduction model was established in the process of femtosecond laser irradiation of SiC. We analyzed the ablation type and calculated the single-pulse ablation threshold of SiC, which verified the feasibility of femtosecond laser polishing. Further, the effects of polishing parameters on the polished surface quality were analyzed by a series of experiments, and the optimal parameters were selected. It was observed to improve polishing efficiency and can replace the intermediate steps of traditional mechanical polishing.