Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/6/6/2130/pdf
Reference35 articles.
1. Si/Ge nanostructures
2. Ge/Si nanowire heterostructures as high-performance field-effect transistors
3. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
4. Strain engineering via amorphization and recrystallization in Si/Ge heterostructures;Park;Phys. Rev. B,2011
5. Room-temperature ferroelectricity in strained SrTiO3
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