Abstract
Nowadays, electronic circuits’ time to market is essential, with engineers trying to reduce it as much as possible. Due to this, simulation has become the main testing concept used in the electronics domain. In order to perform the simulation of a circuit, a behavioral model must be created. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are semiconductor devices found in a multitude of electronic circuits, and they are also used as power switches in many applications, such as low-dropout linear voltage regulators, switching regulators, gate drivers, battery management systems, etc. A MOSFETs’ behavior is extremely complex to model, thus, creating high-performance models for these transistors is an imperative condition in order to emulate the exact real behavior of a circuit using them. An essential parameter of MOSFET power switches is the ON-state resistance (RDSON), because it determines the power losses during the ON state. Ideally, the power losses need to be zero. RDSON depends on multiple factors, such as temperature, load current, and gate-to-source voltage. Previous studies in this domain focus on the modeling of the MOSFET only in specific operating points, but do not cover the entire variation range of the parameters, which is critical for some applications. For this reason, in this paper, there was introduced for the first time a novel ON-state resistance modeling technique for MOSFET Power Switches, which solves the entire RDSON dependency on the transistor’s variables stated above. The novel RDSON modeling technique is based on modulating the transistor’s gate-to-source voltage such that the exact RDSON value is obtained in each possible operating point. The method was tested as a real-life example by creating a behavioral model for an N-channel MOSFET transistor and the chosen simulation environment was Oregon, USA, Computer-Aided Design (OrCAD) capture. The results show that the model is able to match the transistor’s RDSON characteristics with a maximum error of 0.8%. This is extremely important for applications in which the temperatures, voltages, and currents vary over a wide range. The new proposed modeling method covers a gap in the behavioral modeling domain, due to the fact that, until now, it was not possible to model the RDSON characteristics in all operating corners.
Subject
General Mathematics,Engineering (miscellaneous),Computer Science (miscellaneous)
Reference24 articles.
1. Pratap, R., Singh, R.K., and Agarwal, V. (2012, January 16–19). SPICE Model development for SiC Power MOSFET. Proceedings of the 2012 IEEE International Conference on Power Electronics, Drives and Energy Systems(PEDES), Bengaluru, India.
2. Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation;Baba;IEEE Trans. Power Electronics,2021
3. Galadi, A. (2019, January 25–26). Dynamic model of power Mosfet for Spice circuit simulation. Proceedings of the 2019 IEEE 5th International Conference on Optimization and Applications (ICOA), Kenitra, Morocco.
4. Bayant Jaliga, B. (2010). Advanced Power Mosfet Concepts, Springer.
5. Barkhordarian, V. (2022, September 08). Power Mosfet Basics. Available online: https://www.infineon.com/dgdl/mosfet.pdf?fileId=5546d462533600a4015357444e913f4f.
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