Terahertz Metamaterial Absorber Based on Ni–Mn–Sn Ferromagnetic Shape Memory Alloy Films

Author:

Liu Rui1,Wang Xiaochuan2,Zhu Jiachen3,Tian Xiaohua4,Zhao Wenbin2,Tan Changlong2,Zhang Kun5ORCID

Affiliation:

1. School of Science, Harbin University of Science and Technology, Harbin 150080, China

2. School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China

3. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

4. School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China

5. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Abstract

Terahertz absorbers have been extensively investigated by researchers due to their applications in thermophotovoltaic energy conversion and sensors, but a key factor limiting their development is the lack of vital and versatile materials. Ferromagnetic shape memory alloys (FSMAs) offer a novel remedy for tunable metamaterials due to their brilliant recovery of deformation, remote control, and transient response. In this study, we propose a tunable absorber based on magnetic field tuning, consisting of Ni–Mn–Sn ferro-magnetic shape memory alloy films in fractal geometry and optically excited Si plates. Numerical analysis shows that the proposed absorber has an absorbance bandwidth of 1.129 THz above 90% between 1.950 THz and 3.079 THz. The absorber geometry can be regulated by an external magnetic field, allowing dynamic switching between broadband and narrowband absorption modes, the latter showing an ultra-narrow bandwidth and a high-quality factor Q of ~25.8. The proposed terahertz absorber has several advantages over current state-of-the-art bifunctional absorbers, including its ultra-thin structure of 10.39 μm and an additional switching function. The absorption can be continuously tuned from 90% to 5% when the light-excited silicon plate is transferred from the insulator state to the metal state. This study presents a promising alternative strategy for developing actively regulated and versatile terahertz-integrated devices.

Funder

Heilongjiang Provincial Natural Science Foundation of China

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

General Materials Science,Metals and Alloys

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