Abstract
Cu-Cu bonding has the potential to break through the extreme boundary of scaling down chips’ I/Os into the sub-micrometer scale. In this study, we investigated the effect of 2-step bonding on the shear strength and electrical resistance of Cu-Cu microbumps using highly <111>-oriented nanotwinned Cu (nt-Cu). Alignment and bonding were achieved at 10 s in the first step, and a post-annealing process was further conducted to enhance its bonding strength. Results show that bonding strength was enhanced by 2–3 times after a post-annealing step. We found 50% of ductile fractures among 4548 post-annealed microbumps in one chip, while the rate was less than 20% for the as-bonded counterparts. During the post-annealing, interfacial grain growth and recrystallization occurred, and the bonding interface was eliminated. Ductile fracture in the form of zig-zag grain boundary was found at the original bonding interface, thus resulting in an increase in bonding strength of the microbumps.
Funder
Ministry of Science and Technology, Taiwan
Subject
General Materials Science,Metals and Alloys
Cited by
8 articles.
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