Low-Temperature Diffusion of Au and Ag Nanolayers for Cu Bonding

Abstract

With the recent rapid development of IT technology, the demand for multifunctional semiconductor devices capable of high performance has increased rapidly, and the miniaturization of such devices has also faced limitations. To overcome these limitations, various studies have investigated three-dimensional packaging methods of stacking devices, and among them, hybrid bonding is being actively conducted during the bonding process. studies of hybrid bonding during the bonding process are active. In this study, Cu bonding using a nano passivation layer was carried out for Cu/SiO2 hybrid bonding applications, with Au and Ag deposited on Cu at the nano level and used as a protective layer to prevent Cu oxidation and to achieve low-temperature Cu bonding. Au was deposited at about 12 nm, and Ag was deposited at about 15 nm, with Cu bonding carried out at 180 °C for 30 min, after which an annealing process was conducted at 200 °C for one hour. After bonding, the specimen was diced into a 1 cm × 1 cm chip, and the bonding interface was analyzed using SEM and TEM. Additionally, the 1 cm × 1 cm chip was diced into 2 mm × 2 mm specimens to measure the shear strength of the bonded chip, and the average shear strength of Au and Ag was found to be 5.4 and 6.6 MPa, respectively. The degree of diffusion between Au-Cu and Ag-Cu was then investigated; the diffusion activation energy when Au diffuses to Cu was 6369.52 J/mol, and the diffusion activation energy when Ag diffuses to Cu was 17,933.21 J/mol.