Low-Temperature and Low-Pressure Cu–Cu Bonding by Highly Sinterable Cu Nanoparticle Paste-Reference-Cited by-同舟云学术

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Low-Temperature and Low-Pressure Cu–Cu Bonding by Highly Sinterable Cu Nanoparticle Paste

Published:2017-04-05 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Li Junjie,Yu Xing,Shi Tielin,Cheng Chaoliang,Fan Jinhu,Cheng Siyi,Liao Guanglan,Tang Zirong

Funder

National Basic Research Program of China

Changjiang Scholars and Innovative Research Team in University

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2037-5.pdf

Reference16 articles.

1. Che FX, Zhang X, Lin JK (2016) Reliability study of 3D IC packaging based on through-silicon interposer (TSI) and silicon-less interconnection technology (SLIT) using finite element analysis. Microelectron Reliab 61:64–70. doi: 10.1016/j.microrel.2015.12.041

2. Wang J, Wang Q, Wang D (2016) Study on Ar (5% H 2) plasma pretreatment for Cu/Sn/Cu solid-state-diffusion bonding in 3D interconnection. IEEE 66th Electron Components Technol Conf 1765–1771. doi: 10.1109/ECTC.2016.110

3. Tan CS, Lim DF, Singh SG et al (2009) Cu-Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol. Appl Phys Lett 95:2007–2010. doi: 10.1063/1.3263154

4. Park M, Baek S, Kim S, Kim SE (2015) Argon plasma treatment on Cu surface for Cu bonding in 3D integration and their characteristics. Appl Surf Sci 324:168–173. doi: 10.1016/j.apsusc.2014.10.098

5. Liu CM, Lin HW, Chu YC et al (2014) Low-temperature direct copper-to-copper bonding enabled by creep on highly (1 1 1)-oriented Cu surfaces. Scr Mater 78–79:65–68. doi: 10.1016/j.scriptamat.2014.01.040

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