IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

Abstract

In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H+ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the DI optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of DI defects. The optical transition of the defect SiC(CSi)2 from q = 0 to q = 1 is considered the experimental value of the DI defect center.