Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure-Reference-Cited by-同舟云学术

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Published:2018-06-14 Issue:6 Volume:8 Page:974
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Kwak Hyeon-Tak,Chang Seung-Bo,Kim Hyun-Jung,Jang Kyu-Won,Yoon Hyung,Lee Sang-Heung,Lim Jong-Won,Kim Hyun-Seok

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/8/6/974/pdf

Reference38 articles.

1. GaN microwave electronics

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. Growth and applications of Group III-nitrides

4. Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

5. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

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