Abstract
In this paper, for the purpose of increasing the wafer yield by controlling the non-uniformity of the material removal rate during the chemical mechanical polishing process, the influence of the cross-sectional shape of the metal-inserted retainer ring and the pressure distribution on the wafer and the retainer ring generated from the multi-zone carrier head are investigated. First, in order to verify the finite element analysis model, it is correlated using the test data. By using a validated finite element model, simulation studies involving several parameters are performed to reduce the irregularity in the wafer: (1) tapered bottom of the retainer ring, (2) machining round corners at the bottom of the retainer ring, (3) the changes in pressure applied to the wafer, (4) the changes in pressure applied to the retainer ring.
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Reference17 articles.
1. Yield Improvement in Wafer Planarization: Modeling and Simulation;Eamajornsiri;J. Manuf. Syst.,2002
2. The Theory and Design of Plate Class Polishing Machine;Preston;J. Soc. Glass Technol.,1927
3. Influence of slurry components on copper CMP performance in alkaline slurry
4. Effects of Temperature on Removal Rate in Cu CMP
5. Effect of Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP;Bae;J. Korea Tribol. Lubr. Eng.,2002
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献