Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport-Reference-Cited by-同舟云学术

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Published:2013-03-15 Issue:3 Volume:6 Page:1050-1060
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Santana Guillermo,de Melo Osvaldo,Aguilar-Hernández Jorge,Mendoza-Pérez Rogelio,Monroy B.,Escamilla-Esquivel Adolfo,López-López Máximo,de Moure Francisco,Hernández Luis,Contreras-Puente Gerardo

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/6/3/1050/pdf

Reference30 articles.

1. Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell

2. Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

3. High quality InxGa1-xN thin films with x > 0.2 grown on silicon

4. Broad visible emission from GaN nanowires grown on n-Si (111) substrate by PVD for solar cell application

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Type-dependent hot carrier behavior in photoelectrochemical reduction and oxidation of Au/GaN junction photoelectrodes;Applied Surface Science;2024-08

2. Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition;physica status solidi (a);2024-05-19

3. Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition;Applied Surface Science;2024-05

4. Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS;Journal of Electronic Materials;2023-09-02

5. Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate;Semiconductor Science and Technology;2023-05-31