A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting
Author:
Ogi Jun1ORCID, Sano Fumiaki1, Nakata Tatsuya1, Kubo Yoshiki1, Onishi Wataru1, Koswaththage Charith1, Mochizuki Takeya1, Tashiro Yoshiaki1, Hizu Kazuki1, Takatsuka Takafumi1, Watanabe Iori1, Koga Fumihiko1, Hirano Tomoyuki1, Oike Yusuke1
Affiliation:
1. Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan
Abstract
In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized potential design. The embedded metal for the contact is also used as an optical shield and a low crosstalk probability of 0.4% is achieved, while the photon detection efficiency is as high as 57%. In addition, the integration of a power grid and the polysilicon resistor on SPAD pixels can help to reduce the voltage drop in anode power supply and reduce the power consumption with SPAD multiplication, respectively, in a large SPAD pixel array for a high-resolution photon-counting image sensor.
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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