Abstract
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a 60Co source of photon energy (1.33 MeV), while a base temperature of 53 °C and 133 °C during the irradiation test was applied. This test campaign had the objective of investigating how the combination of gamma irradiation and temperature affects dynamic on-resistance (RON) behaviour. The results indicated that gate voltage bias stress affected the degradation of dynamic on-resistance when irradiation was applied, and that temperature was an accelerating factor in dynamic on-resistance degradation. Finally, we obtained a partial reduction in dynamic RON when a total ionising dose of around 140 krad(SiO2) was applied and the base temperature during the irradiation test was not high.
Funder
Spanish Ministry of Science, Innovation and Universities and the European Regional Development Fund
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science