Obtaining of Mg-Zn Co-Doped GaN Powders via Nitridation of the Ga-Mg-Zn Metallic Solution and Their Structural and Optical Properties

Author:

Gastellóu Erick12ORCID,García Rafael2,Herrera Ana M.2,Ramos Antonio2,García Godofredo3,Hirata Gustavo A.4,Luna José A.3ORCID,Carrillo Roberto C.5ORCID,Rodríguez Jorge A.1ORCID,Robles Mario1,Ramírez Yani D.6,Martínez Guillermo7ORCID

Affiliation:

1. División de Sistemas Automotrices, Universidad Tecnológica de Puebla (UTP), Antiguo Camino a la Resurrección 1002–A, Zona Industrial, Puebla 72300, Puebla, Mexico

2. Departamento de Investigación en Física, Universidad de Sonora (UNISON), Rosales y Colosio, C. De la Sabiduría, Centro, Hermosillo 83000, Sonora, Mexico

3. Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla (BUAP), 14 Sur y Av. San Claudio, Puebla 72570, Puebla, Mexico

4. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México (UNAM), Carr. Tijuana-Ensenada km107, C.I.C.E.S.E., Ensenada 22860, Baja California, Mexico

5. Departamento de Física, Universidad de Sonora (UNISON), Rosales y Colosio, C. De la Sabiduría, Centro, Hermosillo 83000, Sonora, Mexico

6. Departamento de Investigación y Desarrollo, Universidad Tecnológica de Puebla (UTP), Antiguo Camino a La Resurrección 1002–A, Zona Industrial, Puebla 72300, Pueble, Mexico

7. Departamento de Ingeniería Química, Universidad de Guanajuato (UGTO), Noría Alta S/N, Guanajuato 36050, Guanajuato, Mexico

Abstract

Mg-Zn co-dopedGaN powders via the nitridation of a Ga-Mg-Zn metallic solution at 1000 °C for 2 h in ammonia flow were obtained. XRD patterns for the Mg-Zn co-dopedGaN powders showed a crystal size average of 46.88 nm. Scanning electron microscopy micrographs had an irregular shape, with a ribbon-like structure and a length of 8.63 µm. Energy-dispersive spectroscopy showed the incorporation of Zn (Lα 1.012 eV) and Mg (Kα 1.253 eV), while XPS measurements showed the elemental contributions of magnesium and zinc as co-dopant elements quantified in 49.31 eV and 1019.49 eV, respectively. The photoluminescence spectrum showed a fundamental emission located at 3.40 eV(364.70 nm), which was related to band-to-band transition, besides a second emission found in a range from 2.80 eV to 2.90 eV (442.85–427.58 nm), which was related to a characteristic of Mg-doped GaN and Zn-doped GaN powders. Furthermore, Raman scattering demonstrated a shoulder at 648.05 cm−1, which could indicate the incorporation of the Mg and Zn co-dopants atoms into the GaN structure. It is expected that one of the main applications of Mg-Zn co-doped GaN powders is in obtaining thin films for SARS-CoV-2 biosensors.

Publisher

MDPI AG

Subject

General Materials Science

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