Carrier-Envelope Phase-Controlled Residual Current in Semiconductors

Author:

Wu Tong1,Yuan Guanglu1,Wang Zishao1,Zhang Xiangyu1,Yu Chao1,Lu Ruifeng12ORCID

Affiliation:

1. Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China

2. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China

Abstract

With the purpose of achieving current control by using intense laser field manipulation, we investigate the effect of carrier-envelope phase (CEP) on residual current in SiO2 crystals. By solving semiconductor Bloch equations, we found that the CEP can strongly influence the carrier population of the conduction band, which means that it can act as a simple, but useful, tool to control residual current. That is, the resultant asymmetric distribution in the first Brillouin zone gave rise to non-zero residual current. Additionally, we further consider the two-color laser scheme to achieve better control of residual current, showing that asymmetric two-color laser fields can induce the maximum residual current.

Funder

National Key Research and Development Program of China

NSF of China

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation

Publisher

MDPI AG

Subject

General Medicine

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