Author:
Li Xuan,Liu Jianping,Su Xujun,Huang Siyi,Tian Aiqin,Zhou Wei,Jiang Lingrong,Ikeda Masao,Yang Hui
Abstract
We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Natural Science Foundation of Jiangsu Province
China Postdoctoral Science Foundation
Subject
General Materials Science
Cited by
5 articles.
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