Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films
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Published:2023-02-27
Issue:3
Volume:14
Page:557
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Nian Laixia1, Qu Yuanhang1, Gu Xiyu2, Luo Tiancheng1, Xie Ying1, Wei Min1, Cai Yao13ORCID, Liu Yan13ORCID, Sun Chengliang13ORCID
Affiliation:
1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China 2. School of Physics and Technology, Wuhan University, Wuhan 430072, China 3. School of Microelectronics, Wuhan University, Wuhan 430072, China
Abstract
Piezoelectric aluminum nitride (AlN) thin film, as a commonly used material for high-frequency acoustic resonators, has been a research hotspot in the RF field. Doping Sc elements in AlN is one of most effective methods to improve the piezoelectricity of the material. In this work, the first principal calculation and Mori–Tanaka model are used to obtain the piezoelectric constants of AlN, ScAlN, and AlN/ScAlN composites. Then, five types of AlN/ScAlN thin films are prepared on 8 inch silicon substrates. The crystal quality, roughness, and stress distribution are measured to characterize the film quality. The results show that composite film can effectively solve the problem of abnormal grains and reduce the roughness. Finally, a lamb wave resonator with an AlN/Sc0.2Al0.8N composite working at 2.33 GHz is fabricated. The effective electromechanical coupling coefficient Keff2 is calculated to be 6.19%, which has the potential to design high-frequency broadband filters.
Funder
Young Scientists Fund of the National Natural Science Foundation of China China Postdoctoral Science Foundation Key R&D program of Hubei Province
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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