Rashba Splitting and Electronic Valley Characteristics of Janus Sb and Bi Topological Monolayers

Abstract

Janus Sb and Bi monolayers as a new class of 2D topological insulator materials, which could be fulfilled by asymmetrical functionalizations with methyl or hydroxyl, are demonstrated by first-principles spin–orbit coupling (SOC) electronic structure calculations to conflate nontrivial topology, Rashba splitting and valley-contrast circular dichroism. Cohesive energies and phonon frequency dispersion spectra indicate that all Janus Sb and Bi monolayers possess a structural stability in energetic statics but represent virtual acoustic phonon vibrations of the hydrogen atoms passivating on monolayer surfaces. Band structures of Janus Sb and Bi monolayers and their nanoribbons demonstrate they are nontrivial topological insulators. Rashba spin splitting at G point in Brillouin zone of Janus Bi monolayers arises from the strong SOC px and py orbitals of Bi bonding atoms together with the internal out-of-plane electric field caused by asymmetrical functionalization. Janus Sb and Bi monolayers render direct and indirect giant bandgaps, respectively, which are derived from the strong SOC px and py orbitals at band-valley Brillouin points K and K′ where valley-selective circular dichroism of spin valley Hall insulators is also exhibited.