Affiliation:
1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2. University of Chinese Academy of Sciences, Beijing 100029, China
Abstract
The selector is an indispensable section of the phase change memory (PCM) chip, where it not only suppresses the crosstalk, but also provides high on-current to melt the incorporated phase change material. In fact, the ovonic threshold switching (OTS) selector is utilized in 3D stacking PCM chips by virtue of its high scalability and driving capability. In this paper, the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the decrease in electrode diameter. Meanwhile, the on-current density (Jon) increases significantly as the device is scaling down, and 25 MA/cm2 on-current density is achieved in the 60-nm SiTe device. In addition, we also determine the state of the Si-Te OTS layer and preliminarily obtain the approximate band structure, from which we infer that the conduction mechanism conforms to the Poole-Frenkel (PF) model.
Funder
Strategic Priority Research Program of the Chinese Academy of Sciences
National Natural Science Foundation of China
Subject
General Materials Science,General Chemical Engineering
Reference24 articles.
1. Elemental Electrical Switch Enabling Phase Segregation–Free Operation;Shen;Science,2021
2. Keep It Simple and Switch to Pure Tellurium;Calarco;Science,2021
3. Phase-Change Materials for Rewriteable Data Storage;Wuttig;Nat. Mater.,2007
4. Direct Atomic Insight into the Role of Dopants in Phase-Change Materials;Zhu;Nat. Commun.,2019
5. Lai, S., and Lowrey, T. (2001, January 2–5). OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications. Proceedings of the International Electron Devices Meeting. Technical Digest, Washington, DC, USA.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献