Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

Author:

Zhu Li1ORCID,Lin Junchen1,Zhu Yixin2,Wu Jie1,Wan Xiang1,Sun Huabin13,Yu Zhihao13,Xu Yong13,Tan Cheeleong13

Affiliation:

1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

2. Yongjiang Laboratory (Y-LAB), Ningbo 315202, China

3. Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China

Abstract

Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO4 solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device’s electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at −0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence.

Funder

National Natural Science Foundation of China

Natural Science Foundation of the Jiangsu Higher Education Institutions of China

Publisher

MDPI AG

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