A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band
Author:
Tang Hui12, Yang Changjin12ORCID, Qin Li123, Liang Lei123ORCID, Lei Yuxin12ORCID, Jia Peng12, Chen Yongyi34, Wang Yubing123, Song Yue12, Qiu Cheng12, Zheng Chuantao5, Li Xin3, Li Dabing12, Wang Lijun123
Affiliation:
1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China 2. Daheng College, University of Chinese Academy of Sciences, Beijing 100049, China 3. Peng Cheng Laboratory, No. 2, Xingke 1st Street, Shenzhen 518000, China 4. Jlight Semiconductor Technology Co., Ltd. No. 1588, Changde Road, Economic and Technological Development Zone, Changchun 130102, China 5. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Abstract
The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.
Funder
National Key R & D Program of China National Natural Science Foundation of China Science and Technology Development Project of Jilin Province Dawn Talent Training Program of CIOMP
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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