A novel bidirectionally operated chirped quantum-dot based semiconductor optical amplifier using a dual ground state spectrum

Author:

Cao Victoria1ORCID,Pan Shujie2ORCID,Wu Dingyi3,Zhang Hongguang3,Tang Mingchu1ORCID,Seeds Alwyn1ORCID,Liu Huiyun1ORCID,Xiao Xi3,Chen Siming124ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering, University College London 1 , London WC1E 7JE, United Kingdom

2. Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 2 , Beijing 100083, China

3. National Information Optoelectronics Innovation Center 3 , Wuhan 430074, China

4. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science 4 , Beijing 101804, China

Abstract

Bi-directionally operated amplifiers enabling efficient utilization of transmission wavelengths are promising candidates in densely integrated photonic circuits for future cost-effective, power-efficient optical networks. Here, we demonstrate, for the first time, a broadband semiconductor optical amplifier (SOA) based on a novel chirped multilayered quantum dot (QD) structure, which is suitable for bi-directional amplification via the dual ground state (GS) emission spectrum. The fabricated QD SOA has achieved a maximum 3-dB gain bandwidth of 50 nm while retaining on-chip gain above 20 dB at both GS wavelengths. Under an optimum pumping current of 280 mA, the bi-directionally operated QD SOA has shown around 10 dB receiver sensitivity improvement in ultra-high-speed 100 Gbaud non-return-to-zero and 53.125 Gbaud four-level pulse amplitude modulation data transmission systems.

Funder

Engineering and Physical Sciences Research Council

National Key Research Development Program of China

Publisher

AIP Publishing

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