Au-Hyperdoped Si Nanolayer: Laser Processing Techniques and Corresponding Material Properties

Author:

Kovalev Michael12ORCID,Nastulyavichus Alena1,Podlesnykh Ivan13ORCID,Stsepuro Nikita1ORCID,Pryakhina Victoria2ORCID,Greshnyakov Evgeny2ORCID,Serdobintsev Alexey4ORCID,Gritsenko Iliya1,Khmelnitskii Roman1,Kudryashov Sergey12ORCID

Affiliation:

1. Lebedev Physical Institute, 119991 Moscow, Russia

2. School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia

3. Laser and Optoelectronic Systems Department, Bauman Moscow State Technical University, 2nd Baumanskaya St. 5/1, 105005 Moscow, Russia

4. Institute of Physics, Saratov State University, 410012 Saratov, Russia

Abstract

The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-hyperdoped Si has been observed. While silicon photodetectors in this range are currently being produced, their efficiency is low. Here, using the nanosecond and picosecond laser hyperdoping of thin amorphous Si films, their compositional (energy-dispersion X-ray spectroscopy), chemical (X-ray photoelectron spectroscopy), structural (Raman spectroscopy) and IR spectroscopic characterization, we comparatively demonstrated a few promising regimes of laser-based silicon hyperdoping with gold. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials has yet to be achieved, and we discuss these opportunities in light of our results.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

MDPI AG

Subject

General Materials Science

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