Improved Performance of High-Voltage Vertical GaN LEDs via Modification of Micro-Cell Geometry-Reference-Cited by-同舟云学术

Improved Performance of High-Voltage Vertical GaN LEDs via Modification of Micro-Cell Geometry

Published:2017-05-24 Issue:6 Volume:7 Page:506
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Wu Ping-Chen,Ou Sin-Liang,Horng Ray-Hua,Wuu Dong-Sing^ORCID

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/7/6/506/pdf

Reference13 articles.

1. Output Properties of Transparent Submount Packaged FlipChip Light-Emitting Diode Modules

2. Luminescent Properties of Sr4Si3O8Cl4:Eu2+, Bi3+ Phosphors for Near UV InGaN-Based Light-Emitting-Diodes

3. Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes

4. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

5. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

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