Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000-Reference-Cited by-同舟云学术

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Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000

Published:2024-03-18 Issue: Volume: Page:
ISSN:
Container-title:Eurosensors 2023
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Author:

Sapienza Sergio¹^ORCID,Belsito Luca¹,Ferri Matteo¹,Elmi Ivan¹,Zielinski Marcin²^ORCID,La Via Francesco³^ORCID,Roncaglia Alberto¹^ORCID

Affiliation:

1. Institute for Microelectronics and Microsystems (IMM), National Research Council, 40129 Bologna, Italy

2. Soitec, Parc Technologique des Fontaines—Chemin des Franques, 38190 Bernin, France

3. Institute for Microelectronics and Microsystems (IMM), National Research Council, 95121 Catania, Italy

Publisher

MDPI

Link

https://www.mdpi.com/2504-3900/97/1/44/pdf

Reference3 articles.

1. Fabrication of high-resolution strain sensors based on wafer-level vacuum packaged MEMS resonators;Belsito;Sens. Actuators A Phys.,2016

2. Nanostrain Resolution Strain Sensing by Monocrystalline 3C- SiC on SOI Electrostatic MEMS Resonators;Belsito;J. Microelectromech. Syst.,2019

3. Measurement of residual stress and Young’s modulus on micromachined monocrystalline 3C-SiC layers grown on <111> and <100> silicon;Sapienza;Micromachines,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on <111> and <100> Silicon;Key Engineering Materials;2024-08-22

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