The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers-Reference-Cited by-同舟云学术

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The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Published:2017-03-06 Issue:3 Volume:7 Page:69
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Wang Dongbo,Liu Gang,Jiao Shujie,Kong Lingping,Liu Teren,Liu Tong,Wang Jinzhong,Guo Fengyun,Luan Chunyang,Li Zhenghao

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/7/3/69/pdf

Reference24 articles.

1. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

5. Origin of efficiency droop in GaN-based light-emitting diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on the Material and Photoluminescence Characteristics of the Structure of Al0.9Ga0.1As/GaAs DBR with Varied Doping;Journal of Electronic Materials;2022-11-07

2. Realization of p-type conduction in compositionally graded quaternary AlInGaN;Micro and Nanostructures;2022-10

3. Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer;Journal of Materials Chemistry C;2021

4. Effect of TMAl flow rate on AlInGaN/GaN heterostructures grown by MOCVD;Optik;2019-02

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