Dual Strategy Based on Quantum Dot Doping and Phenylethylamine Iodide Surface Modification for High-Performance and Stable Perovskite Solar Cells

Abstract

High-quality perovskite films (PFs) are crucial for achieving high-performance perovskite solar cells (PSCs). Herein, we report a dual-modification strategy via incorporating CsPbBr3 QDs into MAPbI3 perovskite bulk and capping the interface of the perovskite/hole transport layer (HTL) with phenylethylamine iodide (PEAI) to improve perovskite crystallinity and interface contact properties to acquire high-quality PFs with fewer defects. CsPbBr3 QDs promoted perovskite grain growth and reduced bulk defects, while PEAI surface modification passivated interfaces, improved hydrophobic properties, and prevented carrier recombination at the perovskite/HTL interface. Benefiting from growth control and the effective suppression of both bulk and interface carrier recombination, the resulting devices show a greatly improved photoelectric conversion efficiency (PCE) from 17.21% of the reference cells to 21.04% with a champion Voc of 1.15 V, Jsc of 23.30 mA/cm2, and fill factor (FF) of 78.6%. Furthermore, the dual-modification strategy endows PFs with promoted moisture tolerance, and the nonencapsulated PSCs retain 75% of their initial efficiency after aging for 30 days at 40% relative humidity and room temperature, which is significantly higher than the 59% value of the original PSCs. Good operational stability and the maintained efficiency of the target device over time suggest the potential for future commercialization.