Abstract
Several key sputtering parameters for the deposition of ScxAl1−xN such as target design, sputtering atmosphere, sputtering power, and substrate temperature are reviewed in detail. These parameters serve a crucial role in the ability to deposit satisfactory films, achieve the desired stoichiometry, and meet the required film thickness. Additionally, these qualities directly impact the degree of c-axis orientation, grain size, and surface roughness of the deposited films. It is systematically shown that the electric properties of ScxAl1−xN are dependent on the crystal quality of the film. Although it is not possible to conclusively say what the ideal target design, sputtering atmosphere, sputtering power, and substrate temperature should be for all sputtering processes, the goal of this paper is to analyze the impacts of the various sputtering parameters in detail and provide some overarching themes that arise to assist future researchers in the field in quickly tuning their sputtering processes to achieve optimum results.
Funder
National Science Foundation
National Aeronautics and Space Administration, Alabama EPSCoR International Space Station Flight Opportunity program
USDA National Institute of Food and Agriculture, AFRI project award
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Cited by
6 articles.
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