Effects of Pd Alloying and Coating on the Galvanic Corrosion between Cu Wire and Bond Pads for a Semiconductor Packaging

Abstract

Semiconductor chips are packaged in a process that involves creating a path to allow for signals to be exchanged with the outside world and ultimately achieving a form to protect against various external environmental conditions such as heat and moisture. The wire bonding type of packaging is a method in which thin metal wires are bonded to pads to create an electrical connection between the chip and the lead frame. An Epoxy Molding Compound (EMC) can be applied to protect semiconductor chips from external environmental conditions such as heat, shock, and moisture. However, EMC contains halogen elements and sulfides and has hydrophilic properties, which can lead to a corrosive environment. The present study aims to evaluate the influence of chloride, which is a contaminant formed during the PCB manufacturing process. To this end, the galvanic corrosion of bonding wire materials Cu wire, Cu wire alloyed with 1% Pd, and Cu wire coated with Pd was investigated. The first ball bond was bonded to the Al pad and the second stitch bond was bonded to the Au pad of the manufacturing process, after which the galvanic corrosion behavior in the semiconductor packaging module specimen was analyzed. A model of galvanic corrosion behavior was also proposed.